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| Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features * * * * * * * * * Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance Low input capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 G2 G1 D S Electrostatic sensitive device. Observe precautions for handling. 13625 Applications Input- and mixer stages especially VHF- and UHFtuners. Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF988 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part BF988 BF988A BF988A BF988A Ordering Ccode BF988 BF988 Marking TO50 TO50 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM Ptot TCh Tstg Value 12 30 10 200 150 - 55 to + 150 Unit V mA mA mW C C Document Number 85007 Rev. 1.7, 11-Sep-08 www.vishay.com 1 BF988 Not for new design, this product will be obsoleted soon Vishay Semiconductors Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition ID = 10 A, - VG1S = - VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 Part Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS - VG1S(OFF) - VG2S(OFF) 4 Min 12 7 7 14 14 50 50 10.5 2.5 2.0 Typ. Max Unit V V V nA nA mA V V Gate 1 - source leakage current VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, VG2S = 4 V BF988A VDS = 15 V, VG2S = 4 V, ID = 20 A VDS = 15 V, VG1S = 0, ID = 20 A Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz AGC range Noise figure VG2S = 4 to - 2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG1S = 0, VG2S = 4 V Test condition Symbol |y21s| Cissg1 Cissg2 Crss Coss Gps Gps Gps F F 16.5 40 1 1.5 Min 21 Typ. 24 2.1 1.2 25 1.05 28 20 2.5 Max Unit mS pF pF fF pF dB dB dB dB dB www.vishay.com 2 Document Number 85007 Rev. 1.7, 11-Sep-08 Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors Common Emitter S-Parameters VDS = 8 V, VG2S = 4 V, Z0 = 50 , Tamb = 25 C, unless otherwise specified ID/mA f/MHz LOG MAG 5 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 10 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 15 100 200 3000 400 500 600 700 800 900 1000 1100 1200 1300 -0.02 -0.10 -0.31 -0.56 -0.87 -1.26 -1.59 -2.04 -2.42 -2.88 -3.39 -3.94 -4.46 -0.02 -0.11 -0.35 -0.62 -0.97 -1.39 -1.76 -2.25 -2.67 -3.16 -3.72 -4.30 -4.87 -0.01 -0.13 -0.37 -0.66 -1.02 -1.47 -1.85 -2.36 -2.80 -3.30 3.89 -4.49 -5.06 S11 ANG deg -7.8 -15.3 -22.8 -30.2 -37.3 -44.3 -50.9 -58.0 -64.4 -71.4 -78.3 -85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9 -75.0 -82.0 -88.8 -95.2 6.01 5.87 5.69 5.42 5.17 4.85 4.54 4.25 4.02 3.78 3.42 3.21 3.01 7.84 7.70 7.49 7.21 6.93 6.59 6.27 5.97 5.71 5.46 5.07 4.85 4.63 8.62 8.46 8.26 7.96 7.66 7.33 6.98 6.68 6.42 6.15 5.75 5.52 5.30 LOG MAG S21 ANG deg 168.4 156.3 144.2 132.9 121.5 110.6 100.4 90.2 80.6 70.8 60.5 51.6 42.0 168.5 156.6 144.8 133.6 122.5 111.9 101.9 92.1 82.8 73.3 63.3 54.6 45.4 168.6 156.8 145.2 134.0 122.9 112.3 102.6 92.8 83.7 74.3 64.6 56.0 46.9 -56.27 -50.61 -47.70 -46.19 -45.46 -45.84 -47.31 -48.19 -50.37 -49.48 47.92 -44.65 -41.76 -55.67 -50.01 -47.20 -45.60 -44.88 -45.25 -46.51 -47.19 -49.28 -48.99 -48.03 -45.15 -42.46 -55.26 -49.61 -46.70 -45.10 -44.38 -44.65 -45.72 -46.29 -48.18 -48.49 -47.93 -45.75 -43.05 LOG MAG S12 ANG deg 83.0 76.6 70.9 65.6 60.6 55.4 58.6 63.3 81.5 115.6 131.7 153.0 159.8 83.0 76.4 70.3 65.1 60.0 54.5 57.4 61.4 76.0 107.1 123.3 147.6 157.6 83.0 76.3 70.3 64.9 59.7 54.3 57.0 60.0 71.9 98.7 114.8 141.2 153.4 -0.02 -0.06 -0.13 -0.20 -0.28 -0.36 -0.43 -0.49 -0.52 -0.54 -0.66 -0.66 -0.66 -0.04 -0.09 -0.16 -0.23 -0.31 -0.42 -0.48 -0.55 -0.58 -0.60 -0.73 -0.73 -0.73 -0.07 -0.12 -0.20 -0.27 -0.36 -0.47 -0.53 -0.61 -0.64 -0.66 -0.77 -0.79 -0.79 LOG MAG S22 ANG deg -3.6 -7.3 -10.6 -14.2 -17.5 20.5 -23.8 -26.8 -30.2 -33.4 -36.8 -40.1 -43.9 -3.7 -7.4 -10.8 -14.3 17.9 -20.9 -24.1 -27.3 -30.6 -33.8 -37.2 -40.6 -44.3 -3.7 -7.5 -11.0 -14.4 -18.0 -20.9 -24.2 -27.4 -30.6 -33.9 -37.3 -40.8 -44.5 Document Number 85007 Rev. 1.7, 11-Sep-08 www.vishay.com 3 BF988 Not for new design, this product will be obsoleted soon Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 Ptot - Total Power Dissipation (mW) 20 4V VDS = 8 V ID - Drain Current (mA) 16 12 8 0 4 VG1S = - 1 V 0 - 0.6 12817 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature (C) 5V 3V 2V 1V - 0.2 0.2 0.6 1.0 1.4 96 12159 VG2S - Gate 2 Source Voltage (V) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 4. Drain Current vs. Gate 2 Source Voltage 25 ID - Drain Current (mA) 20 15 10 5 0 0 12812 V G2S = 4 V Cissg1 - Gate 1 Input Capacitance ( pF ) 30 V G1S = 0.6 V 0.4 V 0.2 V 0 - 0.2 V - 0.4 V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 V G1S - Gate 1 Source Voltage ( V ) V DS = 8 V V G2S = 4 V f = 1 MHz 2 4 6 8 10 VDS - Drain Source Voltage (V) 12813 Figure 2. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage 20 VDS = 8 V ID - Drain Current (mA) 16 12 8 4 0 - 0.8 12816 6V 5V 4V Cissg2 - Gate 2 Input Capacitance ( pF ) 3V 2V 1V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -1 V DS = 8 V V G1S = 0 f = 1 MHz 0 VG2S = - 1 V - 0.4 0.0 0.4 0.8 1.2 VG1S - Gate 1 Source Voltage (V) 12814 0 1 2 3 4 5 V G2S - Gate 2 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage www.vishay.com 4 Document Number 85007 Rev. 1.7, 11-Sep-08 Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors Coss - Output Capacitance ( pF ) 4.0 3.2 2.4 1.6 0.8 0.0 2 V G2S = 4 V V G1S = 0 f = 1 MHz Im (y11) (ms) 20 18 16 14 12 10 8 6 4 2 0 100 MHz 0 12820 f = 1300 MHz 1000 MHz 700 MHz V DS = 8 V V G2S = 4 V I D = 10 mA f = 100...1300 MHz 6 8 10 12 14 400 MHz 12815 4 6 8 10 12 V DS - Drain Source Voltage ( V ) 2 4 Re (y11) (mS) Figure 7. Output Capacitance vs. Drain Source Voltage Figure 10. Short Circuit Input Admittance 10 f = 800 MHz - Transducer Gain (dB) 0 - 10 - 20 4V 3V 2V 1V 0 - 0.2 V 5 0 -5 V DS = 8 V V G2S = 4 V f = 100...1300 MHz I D = 5 mA 10 mA 20 mA 700 MHz 1000 MHz 1300 MHz 0 12821 f = 100 MHz Im (y21) (ms) - 10 - 15 - 20 - 25 - 30 - 35 - 40 4 400 MHz - 30 - 0.4 V - 40 - 50 - 1.0 VG2S = - 0.8 V - 0.5 0.0 0.5 1.0 1.5 S 21 2 8 12 16 20 24 28 32 12818 VG1S - Gate 1 Source Voltage (V) Re (y21) (mS) Figure 8. Transducer Gain vs. Gate 1 Source Voltage Figure 11. Short Circuit Forward Transfer Admittance y21s - Forward Transadmittance (ms) 32 28 24 20 16 12 8 4 0 0 0 4 8 12 16 20 24 28 ID - Drain Current (mA) 1V 2V VDS = 8 V f = 1 MHz VG2S = 4 V 3V Im (y22) (ms) 9 8 7 6 5 4 3 2 1 0 0.00 12822 f = 1300 MHz 1000 MHz 700 MHz 400 MHz 100 MHz 0.25 0.50 V DS = 15 V V G2S = 4 V I D =10 mA f = 100...1300 MHz 1.00 1.25 1.50 0.75 12819 Re (y22) (mS) Figure 9. Forward Transadmittance vs. Drain Current Figure 12. Short Circuit Output Admittance Document Number 85007 Rev. 1.7, 11-Sep-08 www.vishay.com 5 BF988 Not for new design, this product will be obsoleted soon Vishay Semiconductors VDS = 8 V, ID = 10 mA, VG2S = 4 V, Z0 = 50 S11 j S21 90 120 j0.5 j2 700 60 1000 30 1300 MHz 400 150 j0.2 j5 100 0 0.2 0.5 1 2 5 100 - j0.2 1300 MHz 1000 - j0.5 12960 180 1 2 0 - j5 - 150 - j2 - 30 - 120 -j 12962 - 60 - 90 Figure 13. Input Reflection Coefficient Figure 15. Forward Transmission Coefficient S12 90 120 60 S22 j j0.5 j2 150 1300 MHz 180 1000 300 100 0.04 0.08 30 j0.2 j5 0 0 0.2 0.5 1 2 5 100 - j5 - j0.2 -150 -30 - j0.5 1300 MHz - j2 -j 12961 -120 -90 -60 12963 Figure 14. Reverse Transmission Coefficient Figure 16. Output Reflection Coefficient www.vishay.com 6 Document Number 85007 Rev. 1.7, 11-Sep-08 Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors Package Dimensions in mm 96 12242 Document Number 85007 Rev. 1.7, 11-Sep-08 www.vishay.com 7 BF988 Not for new design, this product will be obsoleted soon Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85007 Rev. 1.7, 11-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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